GaAs Hall Device
GaAs Hall Devices
OH10003
GaAs Hall Device
Magnetic sensor I Features
• Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)...
Description
GaAs Hall Devices
OH10003
GaAs Hall Device
Magnetic sensor I Features
Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) Input resistance: typ. 0.85 kΩ Satisfactory linearity of GaAs hall voltage with respect to the magnetic field Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package.
2.9 ± 0.2
0.65 ± 0.15 2.8 − 0.3 1.5
+ 0.2 − 0.3 + 0.2
Unit : mm
0.65 ± 0.15
0.5 R
0.95
1.9 ± 0.2
4
1
0.95
3
2
1.1 − 0.1
Various hall motor (VCR, phonograph, VD, CD, and FDD) Automotive equipment Industrial equipment Applicable to wide-varying field (OA equipment, etc.)
I Absolute Maximum Ratings Ta = 25°C
Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD Topr Tstg Rating 12 150 −30 to +125 −55 to +125 Unit V mW °C °C
1 : VH Output (−) side 2 : VC Input (−) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin)
Marking Symbol: 3
I Electrical Characteristics Ta = 25°C
Parameter Hall voltage*1, 4 Unequilibrium ratio*2, 4 Symbol VH VHO/VH RIN ROUT β α γ Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T/B = 0.1 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.50 0.852 5 −0.06 0.3 2 Min 130 Typ 150 Max 170 ±12 Unit mV % kΩ kΩ %/°C %/°C %
Input resistance Output resistance Temperature coefficient of hall voltage ...
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