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DB-900-80W Dataheets PDF



Part Number DB-900-80W
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description RF Power Amplifier Demoboard
Datasheet DB-900-80W DatasheetDB-900-80W Datasheet (PDF)

DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY • BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CD MA / 9ch FWD Pout = 14W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-80W is a c.

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DB-900-80W 80W / 26V / 869-894 MHz PA using 2x PD57045S The LdmoST FAMILY PRELIMINARY DATA RF POWER AMPLIFIER DEMOBOARD USING TWO N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 80 W min. with 13 dB gain over 869-894 MHz • 10:1 LOAD VSWR CAPABILITY • BeO FREE AMPLIFIER TYPICAL CDMA PERFORMANCE: IS-95 CD MA / 9ch FWD Pout = 14W Gain = 13 dB Nd = 22% ACPR (750 KHz) : -45 dBc ACPR (1.98 MHz) : -60 dBc DESCRIPTION The DB-900-80W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for IS-54/-136 & IS-95 base station applications. The DB-900-80W is designed in cooperation with Europeenne de Telecomunications S.A. (www.etsa.rf), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC) Symbol VDD ID PDISS TCASE Pamb Supply voltage Drain Current Power dissipation at Tcase = +85°C Operating Case Temperature Max. Ambient Temperature Parameter Value 32 9 135 -20 to +85 +55 Unit V A W o o ORDER CODE DB-900-80W MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm C C 1/6 November, 20 2002 DB-900-80W ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200 mA) Symbol FREQ. Gain P1dB Flatness Flatness ND at P1dB IRTL Harmonic VSWR Spurious IMD3 Frequency Range POUT = 80 W Over frequency range: 869 - 894 MHz Over frequency range and @ POUT = 80 W POUT from 0.1W to 80 W P1dB Input return Loss POUT from 0.1W to 80 W POUT = 80 W Load Mismatch all phases @ POUT = 80 W 10:1 VSWR all phases and POUT from 0.1 to 80W POUT = 80 WPEP 10:1 -76 -25 dBc dBc 45 50 -20 -40 -15 -30 Test Conditions Min. 869 13 80 14 90 +/- 0.5 1 Typ. Max. 894 Unit MHz dB W dB dB % dB dBc TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 300mA) Frequency Pout CH PWR Pin CH PWR Pout CH PWR ACPR -750 KHz ACPR +750 KHz ACPR -1.98 MHz ACPR +1.98 MHz Itotal Nd (MHz) 865 875 885 895 865 875 885 895 865 875 885 895 (W) 0.63 0.63 0.63 0.63 3.98 3.98 3.98 3.98 15.85 14.79 14.13 14.79 (dBm) 16.3 15.7 15.3 14.9 23.3 23.0 22.6 22.3 28.9 28.3 28.2 28.0 (dBm) 28.0 28.0 28.0 28.0 36.0 36.0 36.0 36.0 42.0 41.7 41.5 41.7 (dBc) 50.5 52.0 54.0 55.0 49.0 49.5 52.0 52.0 45 45 45 45 (dBc) 51.5 53.0 55.0 54.5 51.0 51.5 54.0 54.0 45 45 45 45 (dBc) 71 71 71 72 68.0 68.0 69.0 70.0 63 64 65 66 (dBc) 70 71 71 72 68.0 68.0 69.0 70.0 63 64 65 66 (A) 0.64 0.61 0.60 0.58 1.42 1.37 1.32 1.26 2.76 2.59 2.50 2.41 (%) 3.79 3.98 4.04 4.18 10.78 11.18 11.60 12.15 22.09 21.96 21.73 23.61 2/6 DB-900-80W TYPICAL PERFORMANCE Output Power vs. Input Power Pout (W) 110 100 17 90 80 70 870 MHz 880 MHz Power Gain vs. Input Power Gp (dB) 18 16 890 MHz 900 MHz 15 880 MHz 60 50 890 MHz 14 900 MHz 870 MHz 860 MHz 40 30 20 10 0 0 1 2 3 4 5 6 Vdd = 26 V Idq = 2 x 200 mA 860 MHz 13 12 11 10 1 Vdd = 26 V Idq = 2 x 200 mA 10 100 1000 Pin (W) Pout (W) Power Gain vs. Frequency Gp (dB) 18 17 16 Pout = 5 W Efficiency vs. Frequency Nd (%) 62 60 58 56 54 Pout = 80 W Pout = 90 W Pout = 100 W 15 14 Pout = 90 W 52 50 48 46 Vdd = 26 V Idq = 2 x 200 mA Pout = 80 W 13 12 11 10 850 44 42 40 850 Vdd = 26 V Idq = 2 x 200 mA 860 870 880 890 900 910 860 870 880 890 900 910 f (MHz) f (MHz) 3/6 DB-900-80W TEST FIXTURE COMPONENT LAYOUT CV1 CV2 Ref. ETSA c07/2000 - Ed1 TEST CIRCUIT PHOTOMASTER Ref. ETSA c07/2000 - Ed1 4/6 DB-900-80W TEST CIRCUIT COMPONENT PART LIST COMPONENT T1, T2 C1, C2, C23, C24 C3, C4 C5, C6, C17, C18 C7, C8, C9, C10, C11, C12, C13, C14 C15, C16 C19, C20 C21, C22 C26, C27 C25 CV1, CV2 P1, P2 R1,R7 R2 R3, R4 R5, R6 D1, D2 SM1, SM2 BOARD SUBSTRATE BACK SIDE CERAMIC CHIP CAPACITORS DESCRIPTION PD57045S TRANSISTOR 47pF - 500V CERAMIC CHIP CAPACITOR 4.7pF - 500V CERAMIC CHIP CAPACITOR 100pF - 500V CERAMIC CHIP CAPACITOR 10pF - 500V CERAMIC CHIP CAPACITOR 100nF - 63V CERAMIC CHIP CAPACITOR 1µF / 35V ELECTROLYTIC CAPACITOR 5.6pF - 500V CERAMIC CHIP CAPACITOR 6.8pF - 500V CERAMIC CHIP CAPACITOR 0.5pF - 500V CERAMIC CHIP CAPACITOR ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V 10K Ohms MULTITURN POTENTIOMETER 100 Ohms 1/4W 1206 SMD CHIP RESISTOR 50 Ohms 30W - 4GHz LOAD 4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR 10K Ohms 1/4W 1206 SMD CHIP RESISTOR ZENER DIODE 5V - 500 mW SOD80 90° SMD HYBRID COUPLER ANAREN Xinger 1304-3 METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ TEFLON-GLASS Er = 2.55 COPPER FLANGE 2 mm THICKNESS ATC100B or EQUIVALENT 5/6 DB-900-80W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. Th.


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