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NE5520279A

Part Number	NE5520279A
Manufacturer	NEC
Description	NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
Published	May 12, 2005
Detailed Description	NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: ...
Datasheet	NE5520279A PDF File

Overview

NEC'S 3.
2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.
7x5.
7x1.
1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP 5.
7 MAX.
0.
6±0.
15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.
2 MAX.
Source 1.
5±0.
2 Source 0X001 4.
4 MAX.
• HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.
8 GHz • SINGLE SUPPLY: 2.
8 to 6.
0 V A 0.
4±0.
15 5.
7 MAX.
0.
2±0.
1 0.
8±0.
15 1.
0 MAX.
• HIGH LINEAR GAIN: 10 dB TYP @ 1.
8 GHz 2 Gate Drain Gate Drain 0.
8 MAX.
3.
6±0.
2 DESCRIPTION NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications.
Die a...

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