NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR
FEATURES
• HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc
Output Power, POU...
NEC's
NPN MEDIUM POWER MICROWAVE
TRANSISTOR
FEATURES
HIGH DYNAMIC RANGE LOW IM DISTORTION: -40 dBc
Output Power, POUT (dBm)
30.0 28.0
NE46100 NE46134
NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA
12.5 V 10 V 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 5 10 15 20 25 5V
HIGH OUTPUT POWER : 27.5 dBm at TYP LOW NOISE: 1.5 dB TYP at 500 MHz LOW COST
DESCRIPTION
NEC's NE461 series of
NPN silicon epitaxial bipolar
transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form.
Input Power, PIN (dBm)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NFMIN GL |S21E|2 hFE ICBO IEBO P1dB IM3 RTH (J-C) RTH (J-A) PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 100 mA Minimum Noise Figure3 at VCE = 10 V, IC = 50 mA, 500 MHz VCE = 10 V, IC = 50 mA, 1 GHz Linear Gain, VCE = 12.5 V, IC = 100 mA, 2.0 GHz VCE = 12.5 V, IC = 100 mA, 1.0 GHz Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz DC Current Gain2 at VCE = 10 V, IC = 50 mA Collector Cutoff Current at VCB = 2...