DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE434S01
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIP...
DATA SHEET
HETERO JUNCTION FIELD EFFECT
TRANSISTOR
NE434S01
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.
1 2.0 ± 0.2
2.
PACKAGE DIMENSIONS (Unit: mm)
0
±
FEATURES
Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm
0.
2
ORDERING INFORMATION
PART NUMBER NE434S01-T1 NE434S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING E
4
3 0.65 TYP. 1.9 ± 0.2 1.6
1. 2. 3. 4.
Source Drain Source Gate
Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature
VDS VGS ID Ptot Tch Tstg
4.0 –3.0 IDSS 300 125 –65 to +125
V V mA mW qC qC
0.125 ± 0.05 0.4 MAX. 4.0 ± 0.2
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 15 MAX. 2.5 20 0 Unit V mA dBm
Document No. P11344EJ3V0DS00 (3rd edition) Date Published October 1996 P Printed in Japan
©
1.5 MAX.
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
2.0 ± 0.2
0.5 TYP.
2
E
1996
NE434S01
ELECTRO-OPTICAL CHARACTERISTICS (TA = 25 qC)
PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure...