NE434S01

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 2.0 ± 0.2 2. PACKAGE DIMENSIONS (Unit: mm) 0 ± FEATURES Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm 0. 2 ORDERING INFORMATION PART NUMBER NE434S01-T1 NE434S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING E 4 3 0.65 TYP. 1.9 ± 0.2 1.6 1. 2. 3. 4. Source Drain Source Gate Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0 –3.0 IDSS 300 125 –65 to +125 V V mA mW qC qC 0.125 ± 0.05 0.4 MAX. 4.0 ± 0.2 RECOMMENDED OPERATING CONDITION (TA = 25 °C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 15 MAX. 2.5 20 0 Unit V mA dBm Document No. P11344EJ3V0DS00 (3rd edition) Date Published October 1996 P Printed in Japan © 1.5 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) 2.0 ± 0.2 0.5 TYP. 2 E 1996 NE434S01 ELECTRO-OPTICAL CHARACTERISTICS (TA = 25 qC) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure...