Document
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32484A
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
PACKAGE DIMENSIONS (Unit: mm)
1.78 ±0.2 1 L L
FEATURES
• Super Low Noise Figure & High Associated Gain • Gate Length : Lg ≤ 0.25 µm • Gate Width : Wg = 200 µm
1.78 ±0.2
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
T
2 L 3 L 4
ORDERING INFORMATION
SUPPLYING FORM STICK Tape & reel 1000 pcs./reel NE32484A-T1A Tape & reel 5000 pcs./reel L = 1.0 ± 0.2 mm
PART NUMBER NE32484A-SL NE32484A-T1
LEAD LENGTH L = 1.7 mm MIN. L = 1.0 ± 0.2 mm
MARKING
T
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 –3.0 IDSS 100 165 150 –65 to +150 V V mA
1. 2. 3. 4.
Source Drain Source Gate
µA
mW ˚C ˚C
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm
Document No. P11785EJ3V0DS00 (3rd edition) (Previous No. TC-2316) Date Published July 1996 P Printed in Japan
©
0.1
1.7 MAX.
0.5 TYP.
0.5 TYP.
1991
NE32484A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga 10.0 15 –0.2 45 MIN. TYP. 0.5 40 –0.8 60 0.6 11.0 0.7 MAX. 10 70 –2.0 UNIT TEST CONDITIONS VGS = –3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 µA VDS = 2 V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 12 GHz
µA
mA V mS dB dB
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Ptot - Total Power Dissipation - mW 50 ID - Drain Current - mA 200 40 30 20 10 –0.4 V –0.6 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V
–0.2 V
150
100
50
0
50
100
150
200
250
0
1
2
3
4
5
TA - Ambient Temperature - ˚C DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB |S21s|2 - Forward Insertion Gain - dB 50 VDS = 2 V ID - Drain Current - mA 40 24
VDS - Drain to Source Voltage - V MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA 20 MSG. 16 |S21S|2 12 MAG.
30
20
10 0 –2.0
8 4 1 2 4 6 8 10 14 20 30 f - Frequency - GHz
–1.0 VGS - Gate to Source Voltage - V
0
Gain Calculations
| S21 | | S12 | | S21 | K ± K2 − 1 | S12 | K= 1 + | ∆ |2 − | S11 |2 − | S22 |2 2 | S12 || S21 |
MSG. =
MAG. =
(
)
∆ = S11 ⋅ S22 − S21 ⋅ S12
2
NE32484A
NOISE FIGURE, ASSOCIATED GAIN vs. RATIO OF DRAIN CURRENT TO ZERO-GATE VOLTAGE CURRENT 24 VDS = 2 V ID = 10 mA
Ga - Associated Gain - dB NF - Noise Figure - dB
NOISE F.