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NE32484A Dataheets PDF



Part Number NE32484A
Manufacturers NEC
Logo NEC
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet NE32484A DatasheetNE32484A Datasheet (PDF)

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 1.78 ±0.2 1 L L FEATURES • Super Low Noise Figure & High Associated Gain • Gate Length : Lg ≤ 0.25 µm • Gate Width : W.

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 1.78 ±0.2 1 L L FEATURES • Super Low Noise Figure & High Associated Gain • Gate Length : Lg ≤ 0.25 µm • Gate Width : Wg = 200 µm 1.78 ±0.2 NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz T 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel 1000 pcs./reel NE32484A-T1A Tape & reel 5000 pcs./reel L = 1.0 ± 0.2 mm PART NUMBER NE32484A-SL NE32484A-T1 LEAD LENGTH L = 1.7 mm MIN. L = 1.0 ± 0.2 mm MARKING T ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 –3.0 IDSS 100 165 150 –65 to +150 V V mA 1. 2. 3. 4. Source Drain Source Gate µA mW ˚C ˚C RECOMMENDED OPERATING CONDITION (TA = 25 ˚C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm Document No. P11785EJ3V0DS00 (3rd edition) (Previous No. TC-2316) Date Published July 1996 P Printed in Japan © 0.1 1.7 MAX. 0.5 TYP. 0.5 TYP. 1991 NE32484A ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga 10.0 15 –0.2 45 MIN. TYP. 0.5 40 –0.8 60 0.6 11.0 0.7 MAX. 10 70 –2.0 UNIT TEST CONDITIONS VGS = –3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 µA VDS = 2 V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 12 GHz µA mA V mS dB dB TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Ptot - Total Power Dissipation - mW 50 ID - Drain Current - mA 200 40 30 20 10 –0.4 V –0.6 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V –0.2 V 150 100 50 0 50 100 150 200 250 0 1 2 3 4 5 TA - Ambient Temperature - ˚C DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB |S21s|2 - Forward Insertion Gain - dB 50 VDS = 2 V ID - Drain Current - mA 40 24 VDS - Drain to Source Voltage - V MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA 20 MSG. 16 |S21S|2 12 MAG. 30 20 10 0 –2.0 8 4 1 2 4 6 8 10 14 20 30 f - Frequency - GHz –1.0 VGS - Gate to Source Voltage - V 0 Gain Calculations | S21 | | S12 | | S21 | K ± K2 − 1 | S12 | K= 1 + | ∆ |2 − | S11 |2 − | S22 |2 2 | S12 || S21 | MSG. = MAG. = ( ) ∆ = S11 ⋅ S22 − S21 ⋅ S12 2 NE32484A NOISE FIGURE, ASSOCIATED GAIN vs. RATIO OF DRAIN CURRENT TO ZERO-GATE VOLTAGE CURRENT 24 VDS = 2 V ID = 10 mA Ga - Associated Gain - dB NF - Noise Figure - dB NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 5 3 VDS = 2 V f = 12 GHz 15 20 2 Ga 10 1 NF 5 0 4 0 40 60 100 Ga - Associated Gain - dB 4 NF - Noise Figure - dB Ga 3 16 2 12 1 NF 0 1 2 4 6 8 10 14 20 30 8 1 2 4 6 8 10 20 IDS/IDSS - Ratio of Drain Current to Zero-Gate Voltage Current - % f - Frequency - GHz 3 NE32484A S-Parameters VDS = 2 V, ID = 10 mA START 500 MHz, STOP 18 GHz, STEP 500 MHz Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S11 1.0 0.5 2.0 +135˚ S12 +90˚ +45˚ 0 0.5 5 4 3 3 1.0 2.0 ∞ ±180˚ 1 2 4 5 0 2 –0.5 –1.0 1 –2.0 Rmax. = 1 –135˚ –90˚ –45˚ Rmax. = 0.25 S21 +90˚ +135˚ 1 2 3 ±180˚ 0 0 0.5 4 4 5 5 3 +45˚ 0.5 S22 1.0 2.0 1.0 2.0 ∞ 2 –135˚ –90˚ –45˚ Rmax. = 5 –0.5 –1.0 1 –2.0 Rmax. = 1 4 NE32484A S-Parameters MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MHz MAG. S11 ANG. (deg.) 500 1 000 1 500 2 000 2 500 3 000 3 500 4 000 4 500 5 000 5 500 6 000 6 500 7 000 7 500 8 000 8 500 9 000 9 500 10 000 10 500 11 000 11 500 12 000 12 500 13 000 13 500 14 000 14 500 15 000 15 500 16 000 16 500 17 000 17 500 18 000 .999 .990 .976 .952 .934 .908 .884 .858 .830 .802 .775 .746 .725 .702 .681 .659 .645 .625 .609 .592 .574 .556 .539 .526 .511 .499 .487 .476 .463 .449 .433 .420 .404 .385 .373 .357 –8.3 –16.6 –24.9 –32.7 –40.5 –48.2 –55.8 –63.1 –70.5 –77.5 –84.5 –91.0 –97.4 –103.5 –109.2 –114.3 –119.4 –124.2 –128.9 –134.2 –139.4 –144.6 –149.9 –155.7 –161.1 –166.2 –171.1 –175.9 179.9 175.4 169.9 164.6 158.5 151.0 143.6 135.1 4.699 4.678 4.611 4.508 4.424 4.328 4.222 4.127 4.022 3.906 3.793 3.669 3.552 3.426 3.324 3.223 3.126 3.050 2.984 2.921 2.868 2.812 2.759 2.705 2.645 2.595 2.543 2.496 2.464 2.441 2.408 2.383 2.377 2.365 2.350 2.321 MAG. S21 ANG. (deg.) 171.5 162.9 154.1 146.0 138.0 130.0 122.2 114.7 107.2 99.9 92.7 85.8 79.0 72.7 66.3 60.1 54.4 48.4 43.1 37.1 31.5 25.7 20.0 14.5 8.3 3.1 –2.3 –8.2 –13.6 –19.5 –24.6 –30.5 –36.4 –42.3 –48.6 –55.0 .009 .019 .027 .035 .043 .051 .056 .062 .067 .072 .075 .078 .081 .083 .085 .088 .090 .092 .094 .097 ..


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