GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER LOW CRSS: 0.02 pF (TYP) HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm ION IMPLANTATION AVAILABLE IN TAPE & REEL OR BULK LOW PACKAGE HEIGHT: 1.0 mm MAX
Power Gain, GPS (dB)
20
NE25118
PO...
