December 1998
NDT456P P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhanc...
December 1998
NDT456P P-Channel Enhancement Mode Field Effect
Transistor
General Description
Power SOT P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
Features
-7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise noted
NDT456P
Units
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
(Note 1a)
-30 ±20 ±7.5 ±20
(Note 1a) (Note 1b) (Note 1c)
V V A
PD
Maximum Power Dissipation
3 1.3 1.1 -65 to 150
W
TJ,TSTG
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
RθJA RθJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
°C/W °C/W
© 1998 Fairchild Semiconductor Corporation
NDT456P Rev. F
Electrical Characteristics (T
Symbol Parameter OFF CHARACTERISTICS
A...