February 1996
NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhan...
February 1996
NDS9957 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
2.6A, 60V. RDS(ON) = 0.16Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
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5
4 3 2
1
6
7 8
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A = 25°C unless otherwise noted
NDS9957 60 ± 20
(Note 1a)
Units V V A
± 2.6 ± 10 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
1.6 1 0.9 -55 to 150 °C
TJ,TSTG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (N...