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NDP608B Dataheets PDF



Part Number NDP608B
Manufacturers Fairchild
Logo Fairchild
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet NDP608B DatasheetNDP608B Datasheet (PDF)

May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutat.

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May 1994 NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 36 and 32A, 80V. RDS(ON) = 0.042and 0.045Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL TC = 25°C unless otherwise noted NDP608A NDP608AE NDB608A NDB608AE 80 80 ±20 ±40 36 144 100 0.67 NDP608B NDP608BE NDB608B NDB608BE Units V V V V 32 128 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP608.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 36 A Type NDP608AE NDP608BE NDB608AE NDB608BE Min Typ Max 200 36 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 18 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP608A NDP608AE NDB608A TJ = 125°C NDB608AE NDP608B NDP608BE NDB608B TJ = 125°C NDB608BE NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 18 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 36 2 1.4 2.9 2.3 0.031 0.05 80 250 1 100 -100 4 3.2 0.042 0.08 0.045 0.09 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 16 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 32 A 10 17.5 1370 390 140 1800 500 200 S pF pF pF Ciss Coss Crss NDP608.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 40 V, ID = 36 A, VGS = 10 V, RGEN = 7.5 Ω Type ALL ALL ALL ALL Min Typ 11 113 37 69 46 8 25 Max 20 190 60 110 65 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 64 V, ID = 36 A, VGS = 10V ALL ALL ALL NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 36 A 32 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP608A NDP608AE NDB608A NDB608AE NDP608B NDP608BE NDB608B NDB608BE 144 A 128 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 18 A VGS = 0 V, IS = 36 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.91 0.81 88 6 1.3 1.2 125 9 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1.5 62.5 °C/W °C/W Notes: 1. NDP608A/608B and NDB608A/608B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%. NDP608.SAM Typical Electrical Characteristics 120 2 V GS = 20V I D , DRAIN-SOURCE CURRENT (A) R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 6V 12 10 1.8 1.6 1.4 1.2 1 0.8 0.6 100 7.0 8.0 80 8.0 60 10 12 20 7.0 40 6.0 20 5.0 0 0 1 2 3 4 V DS , DRAIN-SOURCE VOLTAGE (V) 5 6 0 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 Figure 1. On-Region Characte.


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