NDP6030

July 1997 NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP6030 30 30 ±20 46 135 75 0.5 -65 to 175 NDB6030 Units V V V A Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed PD Total Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C TJ,TSTG RθJC Rθ JA Operating and Storage Temper...