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NDM3001 Dataheets PDF



Part Number NDM3001
Manufacturers Fairchild
Logo Fairchild
Description 3 Phase Brushless Motor Driver
Datasheet NDM3001 DatasheetNDM3001 Datasheet (PDF)

February 1997 NDM3001 3 Phase Brushless Motor Driver General Description The NDM3001 three phase brushless motor driver consists of three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using Fairchild's proprietary, high cell density DMOS technology. This very high density process is tailored to minimize on-state resistance which reduces power loss, provide superior switching performance, and withstand high energy pulses in the avalanche and commutati.

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February 1997 NDM3001 3 Phase Brushless Motor Driver General Description The NDM3001 three phase brushless motor driver consists of three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using Fairchild's proprietary, high cell density DMOS technology. This very high density process is tailored to minimize on-state resistance which reduces power loss, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage 3 phase motor driver such as disk drive spindle motor control and other half bridge applications. Features ±2.9 A, ±30 V, 2.5W High density cell design for extremely low RDS(ON). High power and current handling capability. Industry standard SOIC-16 surface mount package. ________________________________________________________________________________ 11,14 10 12 15 Q1 1,16 4,13 8,9 Q3 Q5 Q2 2 5 7 3,6 Q4 Q6 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter T A = 25°C unless otherwise noted NDM3001 ±30 ±20 ±2.9 ±10 2.5 1.6 (Note 1c) Units V V A Drain-Source Voltage (All Types) Gate-Source Voltage (All Types) Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 Continuous Q3+Q6 or Q5+Q2 or Q5+Q4 - Pulsed (Note 1a & 2) (Note 1a) (Note 1b) PD Total Power Dissipation Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 W 1.4 -55 to 150 °C TJ,TSTG Operating and Storage Temperature Range © 1997 Fairchild Semiconductor Corporation NDM3001 Rev.C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1a) Thermal Resistance, Junction-to-Case Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1) 50 °C/W RθJC 20 °C/W Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = ± 250 µA VDS = ±24 V, VGS = 0 V TJ=55 C Gate - Body Leakage, Forward (Note 3) o All All ±30 ±1 ±10 V µA µA nA VGS = ±20 V, VDS = 0 V VDS = VGS, ID = -250 µA TJ=125 C VDS = VGS, ID = 250 µA TJ=125 C o o All ±100 ON CHARACTERISTICS Gate Threshold Voltage Q1, Q3, Q5 -1 - 0.75 -1.6 -1.3 1.5 1.2 0.19 0.27 0.3 -2 -1.5 2 1.5 0.24 0.45 0.36 0.115 0.221 0.16 V Q2, Q4, Q6 1 0.75 RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -2.9 A TJ=125 C VGS = -4.5 V, ID = -2.2 A VGS = 10 V, ID = 2.9 A TJ=125oC VGS = 4.5 V, ID = 2.2 A o Q1, Q3, Q5 Ω Q2, Q4, Q6 0.09 0.126 0.13 ID(on) On-State Drain Current VGS = 10 V, VDS = -5 V VGS = 10 V, VDS = 5 V Q1, Q3, Q5 Q2, Q4, Q6 -10 10 A DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Q1, Q3, Q5 VDS = -15 V, VGS = 0 V, f = 1.0 MHz Q2, Q4, Q6 15 V, VGS = 0 V, f = 1.0 MHz VDS = Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 260 185 140 115 50 40 pF pF pF Output Capacitance Reverse Tran.


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