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NDL5422P Dataheets PDF



Part Number NDL5422P
Manufacturers NEC
Logo NEC
Description 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE
Datasheet NDL5422P DatasheetNDL5422P Datasheet (PDF)

DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ120 µm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency. FEATURES • Small dark current • High quantum efficiency • Cut-off frequency • Detecting area size • Low operat.

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DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ120 µm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency. FEATURES • Small dark current • High quantum efficiency • Cut-off frequency • Detecting area size • Low operating voltage ID = 0.1 nA η = 86 % @ λ = 1 300 nm η = 80 % @ λ = 1 550 nm fC = 1.5 GHz MIN. φ120 µm PACKAGE DIMENSIONS NDL5471RC for FC Connector 2– 4 Depth±1.5 2– 2.2 3.5 8.9±0.1 in millimeters NDL5471RD for SC Connector 2– 2.3 7.4 9.4±0.1 13.44±0.1 19±0.1 12.8±0.3 18.0±0.1 22.0±0.3 4–C1.0 3.4 4.4 2.0±0.1 12.5 MIN. 6.0±0.1 8.0±0.1 C0.5 M8×0.75 2.0 6.8 PIN CONNECTIONS Case 4 3 Cathode 2.0 6.8 3 4 1 1 Anode 3 4 1 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P10263EJ4V0DS00 (4th edition) Date Published April 1999 NS CP(K) Printed in Japan The mark • shows major revised points. © 12.5 MIN. 6.0±0.1 2.0±0.1 14.2±0.2 8.5 7.92 1995, 1999 NDL5471R Series ORDERING INFORMATION Part Number NDL5471RC NDL5471RD Device Type FC type receptacle module SC type receptacle module ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Reverse Voltage Forward Current Reverse Current Optical Input Power Operating Case Temperature Storage Temperature Symbol VR IF IR Pin TC Tstg Ratings 20 10 0.5 8 –40 to +85 –40 to +85 Unit V mA mA mW °C °C ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C) Parameter Dark Current Terminal Capacitance Quantum Efficiency Symbol ID Ct VR = 5 V VR = 5 V, f = 1.0 MHz λ = 1 300 nm, VR = 5 V λ = 1 550 nm, VR = 5 V Responsivity S λ = 1 300 nm, VR = 5 V λ = 1 550 nm, VR = 5 V Cut-off Frequency fC VR = 5 V, RL = 50 Ω, −3dB 1.5 0.78 75 Conditions MIN. TYP. 0.1 1.1 86 80 0.89 1.0 GHz A/W MAX. 1.0 1.5 Unit nA pF % η 2 Data Sheet P10263EJ4V0DS00 NDL5471R Series TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified) WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY Responsivity (Relative Value) ∆ S/S (%) 100 10 TEMPERATURE DEPENDENCE OF RESPONSIVITY λ = 1 300 nm Quantum Efficiency η (%) 80 60 0 40 20 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 –10 –60 –40 –20 0 20 40 60 80 100 Wavelength λ ( µm) Case Temperature TC (˚C) REVERSE VOLTAGE DEPENDENCE OF DARK CURRENT 10 TC = +75 ˚C 10 TEMPERATURE DEPENDENCE OF DARK CURRENT VR = 5 V 1.0 Dark Current ID (nA) +25 ˚C 0.1 0 ˚C –25 ˚C 0.01 Dark Current ID (nA) 1.0 +50 ˚C 0.1 0.01 0.001 0 10 Reverse Voltage VR (V) 20 0.001 –60 –40 –20 0 20 40 60 80 100 Case Temperature TC (˚C) FREQUENCY RESPONSE 5 VR = 10 V λ = 1 300 nm RL = 50 Ω REVERSE VOLTAGE DEPENDENCE OF TERMINAL CAPACITANCE f = 1.0 MHz Terminal Capacitance Ct (pF) Response (3dB/div.) 1 0 2.5 Frequency f (GHz) 5.0 0.5 0.01 0.1 1 10 100 Reverse Voltage VR (V) Remark The graphs indicate nominal characteristics. Data Sheet P10263EJ4V0DS00 3 NDL5471R Series InGaAs PIN-PD Absolute maximum ratings Part number Pin (mW) NDL5421P/P1/P2 8 TC (°C) Tstg (°C) Detecting area size (µm) Typical characteristics (TC = 25°C) ID (nA) VR (V) 5 TYP. 0.1 Ct (pF) VR (V) 5 TYP. 0.7 S (A/W) fC Package λ (nm) 1300 1550 TYP. (GHz) MIN. 0.89 0.94 0.89 1.00 0.89 0.94 0.89 1.00 0.85 2.5 Coaxial 1.5 Receptacle 2.5 2.5 Butterfly with AMP Coaxial 2.5 Coaxial –40 to +85 –40 to +85 φ 50 NDL5422P – –40 to +70 –40 to +85 φ 50 5 0.1 – – 1300 1550 NDL5461P/P1/P2 8 –40 to +85 –40 to +85 φ 80 5 0.1 5 1.0 1300 1550 NDL5471RC/RD 8 –40 to +85 –40 to +85 φ 120 5 0.1 5 1.1 1300 1550 NDL5481P/P1/P2 8 –40 to +85 –40 to +85 φ 80 10 0.1 10 0.7 1300 4 Data Sheet P10263EJ4V0DS00 NDL5471R Series REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor selection guide Document No. C11159E C11531E C10535E X10679E Data Sheet P10263EJ4V0DS00 5 NDL5471R Series [MEMO] 6 Data Sheet P10263EJ4V0DS00 NDL5471R Series [MEMO] Data Sheet P10263EJ4V0DS00 7 NDL5471R Series CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. • The information in this document is subject to change with.


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