Document
DATA SHEET
PHOTO DIODE
NDL5471R Series
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ120 µm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE
DESCRIPTION
The NDL5471R Series is an InGaAs PIN photo diode receptacle module especially designed for a detector of long wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency.
FEATURES
• Small dark current • High quantum efficiency • Cut-off frequency • Detecting area size • Low operating voltage ID = 0.1 nA
η = 86 % @ λ = 1 300 nm η = 80 % @ λ = 1 550 nm
fC = 1.5 GHz MIN.
φ120 µm
PACKAGE DIMENSIONS NDL5471RC
for FC Connector 2– 4 Depth±1.5 2– 2.2
3.5 8.9±0.1
in millimeters
NDL5471RD
for SC Connector 2– 2.3
7.4 9.4±0.1
13.44±0.1 19±0.1
12.8±0.3 18.0±0.1 22.0±0.3
4–C1.0
3.4 4.4 2.0±0.1
12.5 MIN. 6.0±0.1
8.0±0.1
C0.5 M8×0.75
2.0 6.8
PIN CONNECTIONS
Case 4 3 Cathode
2.0 6.8
3
4 1
1
Anode
3
4
1
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P10263EJ4V0DS00 (4th edition) Date Published April 1999 NS CP(K) Printed in Japan
The mark • shows major revised points.
©
12.5 MIN. 6.0±0.1
2.0±0.1 14.2±0.2
8.5 7.92
1995, 1999
NDL5471R Series
ORDERING INFORMATION
Part Number NDL5471RC NDL5471RD Device Type FC type receptacle module SC type receptacle module
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter Reverse Voltage Forward Current Reverse Current Optical Input Power Operating Case Temperature
Storage Temperature
Symbol VR IF IR Pin TC Tstg
Ratings 20 10 0.5 8 –40 to +85 –40 to +85
Unit V mA mA mW °C °C
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C)
Parameter Dark Current Terminal Capacitance Quantum Efficiency Symbol ID Ct VR = 5 V VR = 5 V, f = 1.0 MHz λ = 1 300 nm, VR = 5 V λ = 1 550 nm, VR = 5 V Responsivity S λ = 1 300 nm, VR = 5 V λ = 1 550 nm, VR = 5 V Cut-off Frequency fC VR = 5 V, RL = 50 Ω, −3dB 1.5 0.78 75 Conditions MIN. TYP. 0.1 1.1 86 80 0.89 1.0 GHz A/W MAX. 1.0 1.5 Unit nA pF %
η
2
Data Sheet P10263EJ4V0DS00
NDL5471R Series
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)
WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY
Responsivity (Relative Value) ∆ S/S (%)
100 10
TEMPERATURE DEPENDENCE OF RESPONSIVITY
λ = 1 300 nm
Quantum Efficiency η (%)
80
60
0
40
20 0 0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
–10 –60
–40
–20
0
20
40
60
80
100
Wavelength λ ( µm)
Case Temperature TC (˚C)
REVERSE VOLTAGE DEPENDENCE OF DARK CURRENT
10 TC = +75 ˚C 10
TEMPERATURE DEPENDENCE OF DARK CURRENT
VR = 5 V 1.0
Dark Current ID (nA)
+25 ˚C 0.1 0 ˚C –25 ˚C 0.01
Dark Current ID (nA)
1.0
+50 ˚C
0.1
0.01
0.001 0
10 Reverse Voltage VR (V)
20
0.001 –60 –40 –20
0
20
40
60
80
100
Case Temperature TC (˚C)
FREQUENCY RESPONSE
5 VR = 10 V λ = 1 300 nm RL = 50 Ω
REVERSE VOLTAGE DEPENDENCE OF TERMINAL CAPACITANCE
f = 1.0 MHz
Terminal Capacitance Ct (pF)
Response (3dB/div.)
1
0
2.5 Frequency f (GHz)
5.0
0.5 0.01
0.1
1
10
100
Reverse Voltage VR (V)
Remark The graphs indicate nominal characteristics.
Data Sheet P10263EJ4V0DS00
3
NDL5471R Series
InGaAs PIN-PD
Absolute maximum ratings Part number Pin (mW) NDL5421P/P1/P2 8 TC (°C) Tstg (°C) Detecting area size (µm) Typical characteristics (TC = 25°C) ID (nA) VR (V) 5 TYP. 0.1 Ct (pF) VR (V) 5 TYP. 0.7 S (A/W) fC Package
λ (nm)
1300 1550
TYP. (GHz) MIN. 0.89 0.94 0.89 1.00 0.89 0.94 0.89 1.00 0.85 2.5 Coaxial 1.5 Receptacle 2.5 2.5 Butterfly with AMP Coaxial 2.5 Coaxial
–40 to +85 –40 to +85
φ 50
NDL5422P
–
–40 to +70 –40 to +85
φ 50
5
0.1
–
–
1300 1550
NDL5461P/P1/P2
8
–40 to +85 –40 to +85
φ 80
5
0.1
5
1.0
1300 1550
NDL5471RC/RD
8
–40 to +85 –40 to +85
φ 120
5
0.1
5
1.1
1300 1550
NDL5481P/P1/P2
8
–40 to +85 –40 to +85
φ 80
10
0.1
10
0.7
1300
4
Data Sheet P10263EJ4V0DS00
NDL5471R Series
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor selection guide Document No. C11159E C11531E C10535E X10679E
Data Sheet P10263EJ4V0DS00
5
NDL5471R Series
[MEMO]
6
Data Sheet P10263EJ4V0DS00
NDL5471R Series
[MEMO]
Data Sheet P10263EJ4V0DS00
7
NDL5471R Series
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal.
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative.
• The information in this document is subject to change with.