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NDH831N Dataheets PDF



Part Number NDH831N
Manufacturers Fairchild
Logo Fairchild
Description N-Channel MOSFET
Datasheet NDH831N DatasheetNDH831N Datasheet (PDF)

July 1996 NDH831N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and portable electronics w.

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July 1996 NDH831N N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and portable electronics where fast switching, low in-line power loss, and resistance to transients are needed. Features 5.8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V RDS(ON) = 0.04Ω @ VGS = 2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) NDH831N 20 8 5.8 20 1.8 1 0.9 -55 to 150 Units V V A W TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDH831N Rev. D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 16 V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ= 125°C Static Drain-Source On-Resistance VGS = 4.5 V, ID = 5.8 A TJ= 125°C VGS = 2.7 V, ID = 5 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current VGS = 4.5 V, VDS = 5 V VGS = 2.7 V, VDS = 5 V Forward Transconductance VDS = 10 V, ID = 5.8 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 720 430 155 pF pF pF 20 5 14 S 0.4 0.3 0.6 0.35 0.022 0.03 0.027 20 1 10 100 -100 V µA µA nA nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage 1 0.8 0.03 0.54 0.04 A W V SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 5 V, ID = 5.8 A, VGS = 4.5 V VDD = 6 V, ID = 1 A, VGEN = 4.5 V, RGEN = 6 Ω 10 30 55 20 19.5 1.8 5.5 20 50 80 40 28 ns ns ns ns nC nC nC NDH831N Rev. D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max 1.5 (Note 2) Units A V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.5 A 0.75 1.2 PD (t ) = R θJ A (t ) T J−TA = R θJ C +RθCA(t ) T J−TA = I2 D (t ) × RDS (ON ) TJ Typical RqJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 70oC/W when mounted on a 1 in2 pad of 2oz copper. b. 125oC/W when mounted on a 0.026 in2 pad of 2oz copper. c. 135oC/W when mounted on a 0.005 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. NDH831N Rev. D Typical Electrical Characteristics 30 V GS =4.5V 3.5 3.0 2 2.5 DRAIN-SOURCE ON-RESISTANCE 1.8 I D , DRAIN-SOURCE CURRENT (A) 25 20 R DS(on) , NORMALIZED 2.7 2.0 1.6 VGS = 2.0V 15 1.4 2 .5 2 .7 3 .0 3.5 4 .0 4 .5 5.0 10 1.2 1.5 5 1 0 0 0.5 1 1.5 2 2.5 3 VDS , DRAIN-SOURCE VOLTAGE (V) 0.8 0 5 10 15 20 I D , DRAIN CURRENT (A) 25 30 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 DRAIN-SOURCE ON-RESISTANCE 2 R DS(ON) , NORMALIZED 1.4 DRAIN-SOURCE ON-RESISTANCE I D = 5.8A VGS = 4.5V R DS(on) , NORMALIZED V GS = 4.5 V TJ = 125°C 1.5 1.2 1 25°C 1 0.8 -55°C 0.6 -50 0.5 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 0 5 10 15 20 I , DRAIN CURRENT (A) D 25 30 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 30 1.4 V DS = 5.0V 25 ID , DRAIN CURRENT (A) GATE-SOURCE THRESHOLD VOLTAGE T = -55°C J 125°C V th, NORMALIZED 1.2 V DS = V GS I D = 250µA 25°C 20 1 15 0.8 10 0.6 5 0 0 0.5 1 1.5 2 2.5 3 VGS , GATE TO SOURCE VOLTAGE (V).


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