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NDB710A Dataheets PDF



Part Number NDB710A
Manufacturers Fairchild
Logo Fairchild
Description N-Channel MOSFET
Datasheet NDB710A DatasheetNDB710A Datasheet (PDF)

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutat.

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May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL TC = 25°C unless otherwise noted NDP710A NDP710AE NDB710A NDB710AE 100 100 ±20 ±40 42 168 150 1 NDP710B NDP710BE NDB710B NDB710BE Units V V V V 40 160 A A W W/°C °C °C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 © 1997 Fairchild Semiconductor Corporation NDP710.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25°C unless otherwise noted) Conditions VDD = 25 V, ID = 42 A Type NDP710AE NDP710BE NDB710AE NDB710BE Min Typ Max 700 42 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 µA VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 21 A ALL ALL TJ = 125°C ALL ALL ALL TJ = 125°C NDP710A NDP710AE NDB710A TJ = 125°C NDB710AE NDP710B NDP710BE NDB710B TJ = 125°C NDB710BE NDP710A NDP710AE NDB710A NDB710AE NDP710B NDP710BE NDB710B NDB710BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 21 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 42 2 1.4 2.9 2.2 0.026 0.044 100 250 1 100 -100 4 3.6 0.038 0.08 0.042 0.09 V µA mA nA nA V V Ω Ω Ω Ω A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 20 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 40 A 20 28 2840 550 175 3600 700 200 S pF pF pF Ciss Coss Crss NDP710.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25°C unless otherwise noted) Conditions VDD = 50 V, ID = 42 A, VGS = 10 V, RGEN = 5 Ω Type ALL ALL ALL ALL Min Typ 15 111 55 81 92 15 44 Max 25 180 90 130 130 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 80 V, ID = 42 A, VGS = 10V ALL ALL ALL NDP710A NDP710AE NDB710A NDB710AE NDP710B NDP710BE NDB710B NDB710BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 42 A 40 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP710A NDP710AE NDB710A NDB710AE NDP710B NDP710BE NDB710B NDB710BE 168 A 160 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 21 A VGS = 0 V, IS = 42 A, dIS/dt = 100 A/µs ALL TJ = 125°C ALL ALL 0.89 0.69 128 8.7 1.3 1.2 180 13 V V ns A trr Irr RθJC RθJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1 62.5 °C/W °C/W Notes: 1. NDP710A/710B and NDB710A/710B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0%. NDP710.SAM Typical Electrical Characteristics 120 V GS = 20V 2.5 12 10 I D , DRAIN-SOURCE CURRENT (A) R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 100 8.0 7.0 2 V GS = 5V 6.0 7.0 8.0 1.5 80 60 6.0 40 10 12 20 1 20 5.0 0 0 2 4 6 V DS , DRAIN-SOURCE VOLTAGE (V) 8 0.5 0 20 40 60 80 I D , DRAIN CURRENT (A) 100 120 Figure 1. On-Region Characte.


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