N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Description
ISL9N302AS3ST
April 2002
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and ...
