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PMLL5265B Dataheets PDF



Part Number PMLL5265B
Manufacturers Philips
Logo Philips
Description Voltage regulator diodes
Datasheet PMLL5265B DatasheetPMLL5265B Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 PMLL5225B to PMLL5267B Voltage regulator diodes Product specification Supersedes data of November 1993 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • Low-power voltage stabilizers or voltage references. handbo.

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DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 PMLL5225B to PMLL5267B Voltage regulator diodes Product specification Supersedes data of November 1993 1996 Apr 26 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 500 mW • Tolerance series: ±5% • Working voltage range: nom. 3.0 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • Low-power voltage stabilizers or voltage references. handbook, 4 columns PMLL5225B to PMLL5267B DESCRIPTION Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The series consists of 43 types with nominal working voltages from 3.0 to 75 V. k a MAM215 The cathode is indicated by a yellow band. Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 25 °C; note 1 tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 tp = 8.3 ms; square wave; Tj ≤ 55 °C prior to surge Tstg Tj Note 1. If flanges are kept at Tflange ≤ 75 °C. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 200 mA; see Fig.4 MIN. − MAX. 1.1 V UNIT storage temperature junction temperature CONDITIONS MIN. − MAX. 250 UNIT mA see Table “Per type” − − − −65 −65 500 40 10 +200 +200 mW W W °C °C 1996 Apr 26 2 1996 Apr 26 3 Philips Semiconductors Per type Tj = 25 °C; unless otherwise specified. WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif (Ω) at IZtest at IZtest NOM. PMLL5225B PMLL5226B PMLL5227B PMLL5228B PMLL5229B PMLL5230B PMLL5231B PMLL5232B PMLL5233B PMLL5234B PMLL5235B PMLL5236B PMLL5237B PMLL5238B PMLL5239B PMLL5240B PMLL5241B PMLL5242B PMLL5243B PMLL5244B PMLL5245B PMLL5246B PMLL5247B PMLL5248B PMLL5249B PMLL5250B 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 MAX. 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 TEMP. COEFF. SZ (%/K) at IZ(2) DIODE CAP. REVERSE CURRENT TEST Cd (pF) at REVERSE CURRENT VOLTAGE IZtest (mA) at f = 1 MHz; at VR = 0 V IR (µA) V R Voltage regulator diodes TYPE No. NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.5 MAX. −0.075 −0.070 −0.065 −0.060 ±0.055 ±0.030 ±0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076 +0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 MAX. 450 450 450 450 450 450 300 300 300 200 200 150 150 150 150 90 85 85 80 80 75 75 75 70 70 60 MAX. 50 25 15 10 5 5 5 5 5 5 3 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10.0 11.0 12.0 13.0 14.0 14.0 15.0 PMLL5225B to PMLL5267B 3.0 3.0 2.5 2.5 2.5 2.0 2.0 1.5 1.5 1.5 1.5 1.5 Product specification 1996 Apr 26 4 Philips Semiconductors TYPE No. WORKING DIFFERENTIAL VOLTAGE RESISTANCE VZ (V)(1) rdif (Ω) at IZtest at IZtest NOM. MAX. 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1400 1600 1700 TEMP. COEFF. SZ (%/K) at IZ(2) DIODE CAP. REVERSE CURRENT TEST Cd (pF) CURRENT at REVERSE IZtest (mA) at f = 1 MHz; VOLTAGE at VR = 0 V IR (µA) V R NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. 1.25 1.25 1.25 1.0 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.3 0.25 0.2 Voltage regulator diodes MAX. +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092 +0.093 +0.094 +0.095 +0.095 +0.096 +0.096 +0.097 +0.097 +0.097 +0.098 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 MAX. 60 55 55 50 50 50 45 45 45 40 40 40 40 40 35 35 35 MAX. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 (V) 17.0 18.0 19.0 21.0 21.0 23.0 25.0 27.0 30.0 33.0 36.0 39.0 43.0 46.0 47.0 52.0 56.0 PMLL5251B PMLL5252B PMLL5253B PMLL5254B PMLL5255B PMLL5256B PMLL5257B PMLL5258B PMLL5259B PMLL5260B PMLL5261B PMLL5262B PMLL5263B PMLL5264B PMLL5265B PMLL5266B PMLL5267B Notes 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 PMLL5225B to PMLL5267B 1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. 2. For types PMLL5225B to PMLL5242B the IZ current is 7.5 mA; for PMLL5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C. Product specification Philips Semiconductors Product specification Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER PMLL5225B to PMLL5267.


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