9013
NPN SILICON TRANSISTOR
TO
92
FEATURES
1.EMITTER
Power dissipation PCM : 0.625 Collector current ICM : 0....
9013
NPN SILICON
TRANSISTOR
TO
92
FEATURES
1.EMITTER
Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)CBO : 45
2.BASE
W A
Tamb=25
3.COLLECTOR
1 2 3
--
V
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage - - Collector-emitter breakdown voltage - - Emitter-base breakdown voltage - - Collector cut-off current -- Collector cut-off current -- Emitter cut-off current --
Tamb=25
Symbol
unless otherwise specified
MIN
MAX UNIT
Test conditions
TYP
V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE HFE
1
Ic= 100
A
IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC= 50 mA IC =500 mA
45 25 5 0.1 0.1 0.1 64 40 0.6 1.2 1.4 300
V V V A A A
Ic= 0. 1 mA IE= 100 VCB= 40 VCE= 20 VEB= VCE= VCE= 5 A V V V
DC current gain(note)
1 V, 1V,
2
Collector-emitter saturation voltage - - Base-emitter saturation voltage -- Base-emitter voltage - -
VCE(sat) VBE(sat) VBE
IC= 500 mA, IB=50 mA IC= 500mA, IB= 50 mA IE=100mA VCE= 6 V, IC= 20 mA 150
V V V
Transition frequency
fT
E 78-112
MHz
f =30MHz
CLASSIFICATION OF HFE(1)
Rank Range
D 64-91
F 96-135
G 112-166
H 144-220
I 190-300
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail:
[email protected]
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