Document
Semiconductor
SRC1211E
NPN Silicon Transistor
Descriptions
• Switching application • Interface circuit and driver circuit application
Features
• • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process High packing density
Ordering Information
Type NO. SRC1211E Marking RD Package Code SOT-523
Outline Dimensions
1.60±0.1. 0.80±0.1.
unit : mm
• Equivalent Circuit
C(OUT)
1.00 BSC
1 3
0.2~0.3 B(IN) R1
1.60±0.1
2
R1 = 10KΩ
E(COMMON) 0.15 Min. 0.70±0.1 0~0.1 0.1 Min.
PIN Connections 1. Base 2. Emitter 3. Collector
KSR-4023-001
1
SRC1211E
Absolute maximum ratings
Characteristic
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Ratings
50 50 5 100 150 150 -55 ~ 150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Input Resistance
(Ta=25°C)
Symbol
ICBO IEBO hFE VCE(SAT) fT
*
Test Condition
VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA -
Min. Typ. Max.
120 0.1 250 10 500 500 0.3 -
Unit
nA nA V MHz KΩ
R1
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 1 hFE - IC Fig. 2 VCE(SAT) - IC
KSR-4023-001
2
.