W TE
POWER SEMICONDUCTORS
Features
! Schottky Barrier Chip ! Guard Ring Die Construction for
Transient Protection ! High...
W TE
POWER SEMICONDUCTORS
Features
!
Schottky Barrier Chip ! Guard Ring Die Construction for
Transient Protection ! High Current Capability ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity Protection Applications
Mechanical Data
! Case: Molded Plastic ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number
SR320 – SR360
3.0A
SCHOTTKY BARRIER RECTIFIER
AB
A
D
DO-201AD Dim Min Max
A 25.4 — B 8.50 9.50 C 1.20 1.30 D 5.0 5.60
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @TL = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@IF = 3.0A
@TA = 25°C @TA = 100°C
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
Symbol VRRM VRWM VR VR(RMS) IO
IFSM
VFM
IRM
Cj RJA Tj, TSTG
SR320 SR330 SR340 SR350 SR360 Unit
20 30 40 50 60 V
14 21 28 35 42 V 3...
