MXR9745T1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MXR9745T1/D Advance Information The RF Small Signal Line Silicon Lateral FET MXR9745T1 MXR9745RT1 31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET N–Channel Enhancement–Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. Performance Specifications at 6 Volt, 850 MHz: Output Power = 31.5 dBm Min Power Gain = 8.5 dB Typ Efficiency = 60% Min Guaranteed Ruggedness at Load VSWR = 20:1 Available in Tape and Reel Packaging Options: T1 Suffix = 1,000 Units per Reel MXR9745RT1 is Gate–Drain Pin Out Reversed. All Electricals Same as MXR9745T1 CASE 345–03 (MXR9745RT1, STYLE 8) (MXR9745T1, STYLE 9) (SOT–89) MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1 MΩ) Gate–Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 50°C Derate above 50°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value 35 25 ± 10 2 10 100 – 65 to +150 150 Unit Vdc Vdc Vdc Adc W mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 10 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Leakage Current (VDS = 35 V, VGS = 0) Gate–Source Leakage Current (VGS = 5 V, VDS = 0) IDSS IGSS – – – – 10 1 µAdc µAdc NOTE – CAU...