InGaAs/InP PIN Photodiode Chips
OPTO-ELECTRONIC PRODUCTS
MXP4003 – 10 Gbps
InGaAs/InP PIN Photo Diode
PRODUCTION DATA SHEET
WWW.Microsemi .COM
DESCRI...
Description
OPTO-ELECTRONIC PRODUCTS
MXP4003 – 10 Gbps
InGaAs/InP PIN Photo Diode
PRODUCTION DATA SHEET
WWW.Microsemi .COM
DESCRIPTION
Microsemi’s InGaAs/InP PIN Photo The MXP4000 series of photo Diode chips are ideal for high bandwidth diodes are currently offered in die
1310nm and 1550nm optical networking form allowing manufacturers the
applications.
versatility of custom assembly
The device series offers superior noise configurations.
performance and sensitivity due to their This device is ideal for manu-
planar construction and passivation.
facturers of optical receivers,
transponders, optical transmission modules and combination PIN photo
diode – transimpedance amplifier. Microsemi will assemble die on
submounts and custom configurations.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES High Responsivity Low Dark Current Extremely Low Capacitance High Bandwidth Custom Sub-mounts
APPLICATIONS 1310nm CATV Optical Applications 1550nm DWDM Optical Applications SONET/SDH, ATM 10 Gigabit Ethernet, Fibre Channel
BENEFITS Planar passivation Low Contact Resistance
Responsivity (Amps / Watt)
PRODUCT HIGHLIGHT
Typical Spectral Responsivity
1.2 1.0 0.8 0.6 0.4 0.2 0.0
800 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nm)
355.6um
± 25um
MXP4003
Anode 45
MICROSEMI
Ø 40um ± 2um Bond Pad
355.6um
± 25um
MXP4003
Ø 40um ± 2um Active Area
150um
± 20um
Copyright 2001 Rev. 1.0
355.6um
± 25um
Microsemi
11861 We...
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