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UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
PNP Medium Power Transistor (Switching)
UMT2907A / SST2907A / MMST2907A / PN2907A
!Features 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A / PN2222A. !External dimensions (Units : mm)
UMT2907A
2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.2 0.9±0.1 0.7±0.1
1.25±0.1
2.1±0.1
0~0.1
(3)
!Package, marking and packaging specifications
Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT2907A SST2907A MMST2907A PN2907A UMT3 R2F T106 3000 SST3 R2F T116 3000 SMT3 R2F T146 3000 TO-92 T93 3000
ROHM : UMT3 EIAJ : SC-70
0.3+0.1 −0 All terminals have same dimensions
0.15±0.05
0.1~0.4
(1) Emitter (2) Base (3) Collector
SST2907A
(1)
2.9±0.2 1.9±0.2 0.95 0.95 (2)
0.95 +0.2 −0.1 0.45±0.1
1.3+0.2 −0.1
2.4±0.2
0~0.1 0.2Min.
(3)
All terminals have same dimensions +0.1 0.15 − 0.06 0.4 +0.1 −0.05
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT2907A, Collector power SST2907A, dissipation MMST2907A PN2907A Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC Limits -60 -60 -5 -0.6 0.2 0.625 150 -55~+150 Unit V V V A
ROHM : SST3
(1) Emitter (2) Base (3) Collector
MMST2907A
(1)
2.9±0.2 1.9±0.2 0.95 0.95 (2)
1.1+0.2 −0.1 0.8±0.1
PC
W
(3)
1.6+0.2 −0.1
2.8±0.2
0~0.1
All terminals have same dimensions
˚C ˚C
ROHM : SMT3 EIAJ : SC-59
0.4 +0.1 −0.05
+0.1 0.15 − 0.06
0.3~0.6
(1) Emitter (2) Base (3) Collector
PN2907A
4.8±0.2
4.8±0.2
3.7±0.2
(12.7Min.)
(1)
(2) 5
(3)
2.5 +0.3 −0.1 0.45±0.1 2.3
2.5Min.
0.5±0.1
ROHM : TO-92 EIAJ : SC-43
(1) Emitter (2) Base (3) Collector
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat) VBE(sat) Min. −60 −60 −5 − − − − − 0.6 − 75 100 DC current transfer ratio hFE 100 100 50 200 − − − − − − − − Typ. − − − − − − − − − − − − − − − − − − − − − − − − Max. − − − −100 −100 −100 −0.4 −1.6 −1.3 −2.6 − − − 300 − − 8 30 50 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns − Unit V V V nA nA V V IC=10µA IC=10mA IE=10µA VCB=−50V VCB=−30V VEB=−3V IC/IB=−150mA/−15mA IC/IB=−500mA/−50mA IC/IB=−150mA/−15mA IC/IB=−500mA/−50mA VCE=−10V, IC=−0.1mA VCE=−10V, IC=−1mA VCE=−10V, IC=−10mA VCE=−10V, IC=−150mA VCE=−10V, IC=−500mA VCE=−20V, IC=−50mA, f=100MHz VCB=−10V, f=100kHz VEB=−2V, f=100kHz VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA VCC=−30V, IC=−150mA, IB1=IB2=−15mA VCC=−30V , IC=−150mA, IB1=IB2=−15mA VCC=−30V, IC=−150mA, IB1=IB2=−15mA Conditions
Transition frequency Collector output capacitance Emitter input capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time
fT Cob Cib ton td tr toff tstg tf
!Electrical characteristic curves
Ta=25˚C
COLLECTOR CURRENT : IC (mA)
600
BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V)
100
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C IC / IB=10
500 400 50 300 200 100 1B=0µA 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output characteristics
Fig.2 Base-emitter saturation voltage vs. collector current
1000
Ta=25˚C
DC CURRENT GAIN : hFE
VCE=10V
100
1V
10 0.1
1.0
10 COLLECTOR CURRENT : IC (mA)
100
1000
Fig.3 DC current gain vs. collector current ( I )
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
1000
VCE=10V
DC CURRENT GAIN : hFE
Ta=125˚C Ta=25˚C
100 Ta=−55˚C
10 0.1
1.0
10 COLLECTOR CURRENT : IC (mA)
100
1000
Fig.4 DC current gain vs. collector current ( II )
1000
COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V)
Ta=25˚C VCE=10V f=1kHz
Ta=25˚C IC / IB=10 0.3
AC CURRENT GAIN : hFE
0.2
100
0.1
10 0.1
1.0
10 COLLECTOR CURRENT : IC (mA)
100
1000
0 1.0
10 100 1000 COLLECTOR CURRENT : IC (mA)
Fig.5 AC current gain vs. collector current
Fig.6 Collector-emitter saturation voltage vs. collector current
CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz)
BASE-EMITTER ON VOLTAGE : VBE(on) (V)
COLLECTOR-EMITTER VOLTAGE : VCE(V)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C VCE=10V
1000
100 100MHz 300MHz 10 200MHz
Ta=25˚C VCE=10V
Ta=25˚C
100
250MHz 1
200MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA)
10 1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Grounded emitter propagation characteristics
Fig.8 Gain bandwidth product vs. collector current
Fig.9 Gain bandwidth product
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
1000
500 Ta=25˚C VCC=30V IC / IB=10
100
Ta=25˚C f=1MHz
Ta=25˚C IC / IB=10
CAPACITANCE (pF)
10
Cob
100
VCC=30V
10V
RISE TIME : tr (n.