MMSD701T1

ON Semiconductort SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage MAXIMUM RATINGS Rating Symbol Reverse Voltage MMSD301T1 MMSD701T1 VR Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range DEVICE MARKING PF TJ Tstg MMSD301T1 = XT, MMSD701T1 = XH Value 30 70 225 –55 to +125 –55 to +150 Unit Vdc mW °C °C MMSD301T1 MMSD701T1 ON Semiconductor Preferred Devices 2 1 CASE 425–04, STYLE 1 SOD–123 1 Cathode 2 Anode ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µA) V(BR)R Volts MMSD301T1 30 — — MMSD70...