MMPQ6502
MMPQ6502
E2 B2 E3 B E4 4 B3
E1
B1
SOIC-16
C1
Pin #1
C2 C1
C C2 3
C C4 4 C3
TRANSIST OR TRANSISTOR C1 B1...
MMPQ6502
MMPQ6502
E2 B2 E3 B E4 4 B3
E1
B1
SOIC-16
C1
Pin #1
C2 C1
C C2 3
C C4 4 C3
TRANSIST OR
TRANSISTOR C1 B1 C3 B3 E1 & E3 & C 2 B2 E 2 C4 B4 E4 TYPE
NPN PNP
Quad
NPN &
PNP General Purpose Amplifier
These complimentary devices can be used in medium power amplifiers, drivers and switches with collector currents to 500 mA. These devices are best used when space is the primary consideration. Sourced from Process 19 & 63. See PN2222A (
NPN) & PN2907A (
PNP) for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
30 60 5.0 1.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die
Max
MMPQ6502 1000 8.0 125 240
Units
mW mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
MMPQ6502, Rev B
MMPQ6502
Quad
NPN &
PNP General Purpose Amplifier
(contin...