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MMPQ2222A SURFACE MOUNT NPN SILICON QUAD TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.
SOIC-16 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance (Total Package) Thermal Resistance (Each Transistor)
SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA ΘJA
75 40 6.0 500 1000 -55 to +150 125 240
UNITS V V V mA mW °C °C/W °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICEV VCE=60V, VEB=3.0V ICBO VCB=60V ICBO VCB=60V, TA=125°C IEBO VBE=3.0V BVCBO IC=10µA BVCEO IC=10mA BVEBO IE=10µA VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=0.1mA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA hFE VCE=10V, IC=10mA, TA=-55°C hFE VCE=10V, IC=150mA hFE VCE=1.0V, IC=150mA hFE VCE=10V, IC=500mA fT VCE=20V, IC=20mA, f=100MHz Cib VEB=0.5V, f=100kHz Cob VCB=10V, f=100kHz NF VCE=10V, IC=100µA, RS=1.0kΩ, f=1.0kHz
MIN
TYP
MAX 10 10 10 10
75 40 6.0 0.3 1.0 1.2 2.0
0.6 35 50 75 35 100 50 40 300 20 4.0
UNITS nA nA µA nA V V V V V V V
300
2.0
MHz pF pF dB
R0 ( 7-November 2001)
Central
TM
MMPQ2222A SURFACE MOUNT NPN SILICON QUAD TRANSISTOR
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS td VCC=30V, VBE(OFF)=0.5V, IC=150mA, IB1=15mA tr VCC=30V, VBE(OFF)=0.5V, IC=150mA, IB1=15mA ts VCC=30V, IC=150mA, IB1= IB2=15mA tf VCC=30V, IC=150mA, IB1= IB2=15mA
MIN
TYP 8.0 20 180 40
MAX
UNITS ns ns ns ns
SOIC-16 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
R0 ( 7-November 2001)
.