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MMDT4401 Dataheets PDF



Part Number MMDT4401
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Datasheet MMDT4401 DatasheetMMDT4401 Datasheet (PDF)

MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Ultra-Small Surface Mount Package • Qualified to AEC-Q101 Standards for High Reliability • Lead Free/RoHS Compliant (Note 3) • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-S.

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MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Ultra-Small Surface Mount Package • Qualified to AEC-Q101 Standards for High Reliability • Lead Free/RoHS Compliant (Note 3) • "Green" Device (Note 4 and 5) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Terminal Connections: See Diagram • Marking Information: K2X – See Page 4 • Ordering & Date Code Information: See Page 4 • Weight: 0.006 grams (approximate) A C2 B1 E1 BC E2 B2 C1 H K J DF C2 B1 E1 L E2 B2 C1 SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 M H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range (Note 1) (Note 1, 2) (Note 1) Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 60 40 6.0 600 200 625 -55 to +150 Unit V V V mA mW °C/W °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30111 Rev. 13 - 2 1 of 4 www.diodes.com MMDT4401 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6) Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ DC Current Gain 20 40 hFE 80 100 40 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Ccb Ceb hie hre hfe hoe Current Gain-Bandwidth Product fT SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td tr ts tf Notes: 6. Short duration pulse test used to minimize self-heating effect. ⎯ 0.75 ⎯ ⎯ ⎯ 1.0 0.1 40 1.0 250 ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 100 100 ⎯ ⎯ ⎯ 300 ⎯ 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 ⎯ 15 20 225 30 Unit Test Condition V IC = 100μA, IE = 0 V IC = 1.0mA, IB = 0 V IE = 100μA, IC = 0 nA VCE = 35V, VEB(OFF) = 0.4V nA VCE = 35V, VEB(OFF) = 0.4V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V ⎯ IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA pF pF kΩ x 10-4 ⎯ μS MHz VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz ns VCC = 30V, IC = 150mA, ns VBE(off) = 2.0V, IB1 = 15mA ns VCC = 30V, IC = 150mA, ns IB1 = IB2 = 15mA PD, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN 300 250 Note 1 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 1,000 TA = 125°C 100 TA = -25°C TA = +25°C 10 VCE = 1.0V 1 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current DS30111 Rev. 13 - 2 2 of 4 www.diodes.com MMDT4401 © Diodes Incorporated CAPACITANCE (pF) 30 f = 1MHz 20 10 5.0 1.0 0.1 Cobo 1.0 10 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 50 0.5 IC IB = 10 0.4 0.3 0.2 TA = 25°C TA = 150°C 0.1 0 1 1,000 TA = -50°C 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current VBE(ON), BASE EMITTER VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 100 1.0 0.9 VCE = 5V 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) fT, GAIN BANDWIDTH PRODUCT (MHz) 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig..


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