Document
MMDT4401
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • Ultra-Small Surface Mount Package • Qualified to AEC-Q101 Standards for High Reliability • Lead Free/RoHS Compliant (Note 3) • "Green" Device (Note 4 and 5)
Mechanical Data
• Case: SOT-363 • Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). • Terminal Connections: See Diagram • Marking Information: K2X – See Page 4 • Ordering & Date Code Information: See Page 4 • Weight: 0.006 grams (approximate)
A
C2 B1 E1
BC
E2 B2 C1
H K
J DF
C2 B1 E1
L
E2 B2 C1
SOT-363 Dim Min Max
A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 M H 1.80 2.20 J — 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
(Note 1) (Note 1, 2)
(Note 1)
Symbol VCBO VCEO VEBO IC Pd RθJA
Tj, TSTG
Value 60 40 6.0 600 200 625
-55 to +150
Unit V V V mA
mW °C/W
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30111 Rev. 13 - 2
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MMDT4401
© Diodes Incorporated
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 6)
Symbol Min
V(BR)CBO V(BR)CEO V(BR)EBO
ICEX IBL
60 40 6.0 ⎯ ⎯
DC Current Gain
20 40 hFE 80 100 40
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
VBE(SAT)
SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance
Ccb Ceb hie hre hfe hoe
Current Gain-Bandwidth Product
fT
SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
td tr ts tf
Notes: 6. Short duration pulse test used to minimize self-heating effect.
⎯
0.75 ⎯
⎯ ⎯ 1.0 0.1 40 1.0 250
⎯ ⎯ ⎯ ⎯
Max
⎯ ⎯ ⎯ 100 100
⎯ ⎯ ⎯ 300 ⎯ 0.40 0.75 0.95 1.2
6.5 30 15 8.0 500 30
⎯
15 20 225 30
Unit Test Condition
V IC = 100μA, IE = 0 V IC = 1.0mA, IB = 0 V IE = 100μA, IC = 0 nA VCE = 35V, VEB(OFF) = 0.4V nA VCE = 35V, VEB(OFF) = 0.4V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
⎯
IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 2.0V
V
IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA
V
IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA
pF pF kΩ x 10-4 ⎯ μS
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA, f = 100MHz
ns VCC = 30V, IC = 150mA, ns VBE(off) = 2.0V, IB1 = 15mA
ns VCC = 30V, IC = 150mA, ns IB1 = IB2 = 15mA
PD, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN
300
250
Note 1
200 150
100
50
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
1,000
TA = 125°C
100
TA = -25°C
TA = +25°C
10
VCE = 1.0V
1
0.1 1
10 100 1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
DS30111 Rev. 13 - 2
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MMDT4401
© Diodes Incorporated
CAPACITANCE (pF)
30
f = 1MHz
20
10
5.0
1.0 0.1
Cobo
1.0 10
REVERSE VOLTS (V) Fig. 3 Typical Capacitance
50
0.5
IC IB
=
10
0.4
0.3
0.2
TA = 25°C TA = 150°C
0.1
0 1
1,000
TA = -50°C
10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage
vs. Collector Current
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0
1.8
1.6
1.4
1.2 1.0
0.8
0.6
0.4
0.2
0
0.001 0.01
0.1
1
10
IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region
100
1.0
0.9 VCE = 5V 0.8
TA = -50°C
0.7 TA = 25°C 0.6
0.5
TA = 150°C
0.4
0.3
0.2
0.1 1
10 100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Base Emitter Voltage vs. Collector Current
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
fT, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1 1 10 100
IC, COLLECTOR CURRENT (mA) Fig..