MMDFS2P102

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MMDFS2P102/D FETKY™ ™ Data Sheet MMDFS2P102 P–Channel Power MOSFET with Schottky Rectifier 20 Volts RDS(on) = 0.16 W VF = 0.39 Volts MOSFET and Schottky Rectifier The FETKY™ product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck–Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. HDTMOS Power MOSFET with Low VF, Low IR Schottky Rectifier Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive — Can be Driven by Logic ICs Mounting Information for SO–8 Package Provided IDSS Specified at Elevated Temperature Applications Information Provided A CASE 751–05, Style 18 (SO– 8) 1 2 3 4 8 7 6 5 C C D D ™ A S G MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (1) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MW) Gate–to–Source Voltage — Continuous Drain Current (3) — Continuous @ TA = 25°C — Continuous @ TA = 100°C — Single Pulse (tp 10 ms) Symbol VDSS VDGR VGS...