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MMDF6N03HD Dataheets PDF



Part Number MMDF6N03HD
Manufacturers Motorola
Logo Motorola
Description Dual MOSFET
Datasheet MMDF6N03HD DatasheetMMDF6N03HD Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF6N03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF6N03HD Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF6N03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF6N03HD Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors Dual HDTMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. These miniature surface mount MOSFETs feature low RDS(on) and true logic level performance. Dual HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. • • • • • • • Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO–8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO–8 Package Provided G ™ DUAL TMOS POWER MOSFET 30 VOLTS RDS(on) = 35 mW D CASE 751–05, Style 11 SO–8 S D Source–1 Gate–1 Source–2 1 2 3 4 8 7 6 5 Drain–1 Drain–1 Drain–2 Drain–2 G S Gate–2 Top View MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Source Current — Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W) Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 sec. Symbol VDSS VGS ID IDM IS PD TJ, Tstg EAS RθJA TL Value 30 ± 20 6.0 30 1.7 2.0 – 55 to 150 325 62.5 260 Unit Vdc Vdc Adc Apk Adc Watts °C mJ °C/W °C DEVICE MARKING D6N03 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. ORDERING INFORMATION Device MMDF6N03HDR2 Reel Size 13″ Tape Width 12 mm embossed tape Quantity 2500 Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 TMOS ©Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MMDF6N03HD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Zero Gate Voltage Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 5.0 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge (See Figure 8) (VDD = 15 Vdc Vdc, VGS = 4.5 Vdc, , ID = 1.0 Adc, RG = 6.0 6 0 Ω) (VDD = 15 Vdc Vdc, VGS = 10 Vdc, , ID = 1.0 Adc, RG = 6.0 6 0 Ω) td(on) tr td(off) tf td(on) tr td(off) tf QT (VDS = 15 Vdc, Vd ID = 5.0 5 0 Adc, Adc VGS = 10 Vdc) ) Q1 Q2 Q3 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 1.7 Adc, VGS = 0 Vdc) (IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — trr (IS = 5 5.0 0 Adc, Ad , VGS = 0 Vdc, Vd , ( dIS/dt = 100 A/µs) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. ta tb QRR — — — — 0.77 0.65 54.5 14.8 39.7 0.048 1.2 — — — — — µC ns Vdc — — — — — — — — — — — — 8.2 8.48 89.6 61.1 11.8 51.3 47.2 62 15.7 2.0 4.6 3.86 16.4 16.9 179 122 23 102 94.5 104 31.4 — — — nC ns ns (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 1 0 MHz) Ciss Coss Crss — — — 430 217 67.5 600 300 135 pF VGS(th) 1.0 RDS(on) — — gFS — 28 42 9.0 35 50 — Mhos — — mΩ Vdc V(BR)DSS 30 IDSS — — IGSS — — — — 1.0 20 100 nAdc — — µAdc Vdc Symbol Min Typ Max Unit Reverse Recovery Time 2 Motorola TMOS Power MOSFET Transistor Device Data MMDF6N03HD TYPICAL ELECTRICAL CHARACTERISTICS 12 10 V 10 ID, DRAIN CURRENT (AMPS) 8.0 6.0.


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