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MMDF2C03HD Dataheets PDF



Part Number MMDF2C03HD
Manufacturers Motorola
Logo Motorola
Description Dual MOSFET
Datasheet MMDF2C03HD DatasheetMMDF2C03HD Datasheet (PDF)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2C03HD/D ™ Data Sheet Medium Power Surface Mount Products MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery t.

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2C03HD/D ™ Data Sheet Medium Power Surface Mount Products MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive — Can Be Driven by Logic ICs • Miniature SO-8 Surface Mount Package — Saves Board Space • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Mounting Information for SO-8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1) Rating Drain–to–Source Voltage Gate–to–Source Voltage Drain Current — Continuous N–Channel P–Channel Drain Current — Pulsed N–Channel P–Channel Operating and Storage Temperature Range Total Power Dissipation @ TA= 25°C (2) Thermal Resistance — Junction to Ambient (2) Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25 Ω) (VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0 Apk, L = 18 mH, RG = 25 Ω) Complementary TMOS Field Effect Transistors MMDF2C03HD Motorola Preferred Device ™ COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS RDS(on) = 0.070 OHM (N-CHANNEL) RDS(on) = 0.200 OHM (P-CHANNEL) D N–Channel G S D P–Channel CASE 751–05, Style 14 SO–8 N–Source N–Gate G S Symbol VDSS VGS ID IDM TJ, Tstg PD RθJA EAS N–Channel P–Channel TL P–Source P–Gate 1 2 3 4 8 7 6 5 N–Drain N–Drain P–Drain P–Drain Top View Value 30 ± 20 4.1 3.0 21 15 – 55 to 150 2.0 62.5 324 324 260 °C Unit Vdc Vdc A °C Watts °C/W mJ Maximum Lead Temperature for Soldering, 0.0625″ from case. Time in Solder Bath is 10 seconds. DEVICE MARKING D2C03 (1) Negative signs for P–Channel device omitted for clarity. (2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max. ORDERING INFORMATION Device MMDF2C03HDR2 Reel Size 13″ Tape Width 12 mm embossed tape Quantity 2500 units Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. REV 5 TMOS ©Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MMDF2C03HD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS(2) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc) (VGS = 10 Vdc, ID = 2.0 Adc) Drain–to–Source On–Resistance (VGS = 4.5 Vdc, ID = 1.5 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc) (VDS = 3.0 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(3) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge (VDS = 10 Vdc, ID = 3.0 Adc, VGS = 10 Vdc) (VDS = 24 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) (VDD = 15 Vdc, ID = 3.0 Adc, VGS = 4.5 Vdc, RG = 9.1 Ω) (VDD = 15 Vdc, ID = 2.0 Adc, VGS = 4.5 Vdc, RG = 6.0 Ω) (VDD = 15 Vdc, ID = 3.0 Adc, VGS = 10 Vdc, RG = 9.1 Ω) (VDD = 15 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω) td(on) tr td(off) tf td(on) tr td(off) tf QT Q1 Q2 Q3 (1) Negative signs for P–Channel device omitted for clarity. (2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (3) Switching characteristics are independent of operating junction temperature. (N.


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