MMBV432LT1

ON Semiconductort Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT–23 plastic package for high volume, pick and place assembly requirements. High Figure of Merit  Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz Guaranteed Capacitance Range Dual Diodes – Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved Matching – Guaranteed ± 1.0% (Max) Over Specified Tuning Range MAXIMUM RATINGS (Each Diode) Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 14 200 225 1.8 +125 –55 to +125 Unit Vdc mAdc mW mW/°C °C °C MMBV432LT1 ON Semiconductor Preferred Device DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 3 1 2 CASE 318–08, STYLE 9 SOT–23 (TO–236AB) 1 3 2 DEVICE MARKING MMBV432LT1 = M4B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current (VR = 9.0 Vdc) Diode Capacitance (VR = 2.0 Vdc, f = 1.0 MHz) Capacitance Ratio C2/C8 (f = 1.0 MHz) Figure of Merit (VR = 2.0 Vdc, f = 100 MHz) Symbol V(BR)R IR CT CR Q Min 14 — 43 1.5 100 Typ — — — — 150 Max — 100 48.1 2.0 — Unit Vdc nAdc pF — — Preferre...