MMBV3700LT1

www.DataSheet4U.com MMBV3700LT1, MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements. They are also available in surface mount. Features http://onsemi.com SOT−23 Long Reverse Recovery Time trr = 300 ns (Typ) Rugged PIN Structure Coupled with Wirebond Construction for Low Series Resistance @ 100 MHz − Optimum Reliability RS = 0.7 W (Typ) @ IF = 10 mAdc 1 Anode 3 Cathode MARKING DIAGRAM 3 SOT−23 (TO−236AB) CASE 318 −08 STYLE 8 Reverse Breakdown Voltage = 200 V (Min) Pb−Free Packages are Available MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C MMBV3700LT1 Derate above 25°C Forward Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range MPN3700 TJ Tstg Symbol VR PD 200 2.8 PD 280 2.8 +125 −55 to +150 mW mW/°C °C °C mW mW/°C Value 20 Unit Vdc 1 2 4R M G G 1 4R = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. TO−92 1 Anode 2 Cathode Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and ar...