MMBV105GLT1

LESHAN RADIO COMPANY, LTD. Silicon Tuning Diode This device is designed in the surface Mount package for general frequency control and tuning applications.It provides solid-state reliability in replacement of mechanical tuning methods. Controlled and Uniform Tuning Ration 3 CATHODE 1 ANODE MMBV105GLT1 3 1 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Rating Symbol Value Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C V R 30 I F 200 P D 225 1.8 Junction Temperature Storage Temperature Range DEVICE MARKING T J +125 T stg –55 to +150 MMBV105GLT1=M4E ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage ( I R=10µAdc) Reverse Voltage Leakage Current ( VR =28Vdc) V (BR)R IR Unit Vdc mAdc mW mW/°C °C °C Min 30 — Max — 50 Unit Vdc nAdc Device Type MMBV105GLT1 C T VR=25Vdc,f =1.0MHz pF Min Max 1.5 2.8 Q V =3.0Vdc R f=50MHz Typ 250 C R C /C...