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MMBTA92 Dataheets PDF



Part Number MMBTA92
Manufacturers Philipss
Logo Philipss
Description PNP Transistor
Datasheet MMBTA92 DatasheetMMBTA92 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: MMBTA42. MARKING TYPE NUMBER MMBTA92 Note 1. ∗ = p: made in Hong Kong. ∗ = t: made i.

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DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: MMBTA42. MARKING TYPE NUMBER MMBTA92 Note 1. ∗ = p: made in Hong Kong. ∗ = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MARKING CODE(1) 7E∗ Top view handbook, halfpage MMBTA92 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. MAX. −300 −300 −5 −100 −200 −100 250 +150 150 +150 V V V UNIT mA mA mA mW °C °C °C 2000 Apr 11 2 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −200 V IC = 0; VEB = −3 V VCE = −10 V; note 1 IC = −1 mA IC = −10 mA IC = −30 mA VCEsat VBEsat Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IC = −20 mA; IB = −2 mA IC = −20 mA; IB = −2 mA IE = ie = 0; VCB = −20 V; f = 1 MHz 25 40 25 − − − − − − − − MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 MMBTA92 UNIT K/W MAX. −250 −100 UNIT nA nA −500 −900 6 − mV mV pF MHz IC = −10 mA; VCE = −20 V; 50 f = 100 MHz 2000 Apr 11 3 Philips Semiconductors Product specification PNP high-voltage transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads MMBTA92 SOT23 D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC TO-236AB EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 2000 Apr 11 4 Philips Semiconductors Product specification PNP high-voltage transistor DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) MMBTA92 This da.


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