Document
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
MMBTA92 PNP high-voltage transistor
Product specification 2000 Apr 11
Philips Semiconductors
Product specification
PNP high-voltage transistor
FEATURES • Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony • Professional communication equipment. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: MMBTA42. MARKING TYPE NUMBER MMBTA92 Note 1. ∗ = p: made in Hong Kong. ∗ = t: made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MARKING CODE(1) 7E∗
Top view
handbook, halfpage
MMBTA92
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1 2 1 2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
MAX. −300 −300 −5 −100 −200 −100 250 +150 150 +150 V V V
UNIT
mA mA mA mW °C °C °C
2000 Apr 11
2
Philips Semiconductors
Product specification
PNP high-voltage transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −200 V IC = 0; VEB = −3 V VCE = −10 V; note 1 IC = −1 mA IC = −10 mA IC = −30 mA VCEsat VBEsat Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IC = −20 mA; IB = −2 mA IC = −20 mA; IB = −2 mA IE = ie = 0; VCB = −20 V; f = 1 MHz 25 40 25 − − − − − − − − MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
MMBTA92
UNIT K/W
MAX. −250 −100
UNIT nA nA
−500 −900 6 −
mV mV pF MHz
IC = −10 mA; VCE = −20 V; 50 f = 100 MHz
2000 Apr 11
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
MMBTA92
SOT23
D
B
E
A
X
HE
v M A
3
Q A A1
1
e1 e bp
2
w M B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2000 Apr 11
4
Philips Semiconductors
Product specification
PNP high-voltage transistor
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
MMBTA92
This da.