MMBTA70LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA70LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBTA70LT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VEBO IC Value –40 –4.0 –100 2 EMITTER 1 3 Unit Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING MMBTA70LT1 = M2C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg Symbol 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) V(BR)CEO V(BR)EBO ICBO –40 –4.0 — — — –100 Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –1.0 mAdc) hFE VCE(sat) 40 — 400 –0.25 — Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) 1. FR–5 = 1.0...