MMBTA13 NPN Darlington Transistor
January 2005
MMBTA13
NPN Darlington Transistor
• This device is designed for applicat...
MMBTA13
NPN Darlington
Transistor
January 2005
MMBTA13
NPN Darlington
Transistor
This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.
3
2
SOT-23 1 Mark: 1M 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCES VCBO VEBO IC TJ, TSTG
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
Value
30 30 10 1.2 -55 to +150
Units
V V V A °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CES Collector-Emitter Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
On Characteristics *
IC = 100µA, IB = 0 VCB = 30V, IE = 0 VEB = 10V, IC = 0
hFE VCE (sat)
DC Current Gain Collector-Emitter Saturation Voltage
V...
