MMBT5088LT1

ON Semiconductort Low Noise Transistors NPN Silicon MMBT5088LT1 MMBT5089LT1 MMBT5089LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50 5089LT1 25 30 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AF) COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 www.DataSheet4U.com Unit mW mW/°C °C/W mW mW/°C °C/W °C 2.4 RqJA TJ, Tstg 417 –55 to +150 DEVICE MARKING MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR–5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. V(BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 ICBO MMBT5088 MMBT5089 IEBO MMBT5088 MMBT5089 — — 50 100 — — 50 50 nAdc 35 30 — — nAdc 30 25 — — Vdc V...