MMBT2222A

® MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type MMBT2222A s Marking M22 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value 75 40 6 0.6 0.8 350 -65 to 150 150 Unit V V V A A mW o o C C February 2003 1/5 MMBT2222A THERMAL DATA R thj-amb Thermal Resistance Junction-Ambient 2 Max 357.1 o C/W Device mounted on a PCB area of 1 cm . ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO I EBO Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 60 V V CE = 60 V V CB = 75 V V CB = 75 V V EB = 3 V I C = 10 mA 40 Min. Typ. Max. 10 20 10 10 15 Unit nA nA nA µA nA V T j = 150 o C V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E ...