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MMBR941BLT1 Dataheets PDF



Part Number MMBR941BLT1
Manufacturers Motorola
Logo Motorola
Description NPN Silicon Low Noise / High-Frequency Transistors
Datasheet MMBR941BLT1 DatasheetMMBR941BLT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per re.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel IC = 50 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS MMBR941 MRF947 MRF9411 SERIES CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR941LT1, T3, MMBR941BLT1 CASE 419–02, STYLE 3 MRF947AT1, MRF947BT1, MRF947T1, T3 CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF9411LT1 REV 9 MOTOROLA RF DEVICE DATA © Motorola, Inc. 1997 MMBR941 MRF947 MRF9411 SERIES 2–1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above Tcase = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PDmax IC TJmax Tstg RθJC MMBR941LT1, T3 10 20 1.5 0.25 3.33 50 150 – 55 to +150 300 MRF9411LT1 10 20 1.5 0.25 3.33 50 150 – 55 to +150 300 MRF947 Series 10 20 1.5 0.188 2.5 50 150 – 55 to +150 400 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W DEVICE MARKING MMBR941LT1 = 7Y MRF9411LT1 = 10 MMBR941BLT1 = 7N MRF947AT1 = G MRF947T1, T3 = A MRF947BT1 = H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (3) Collector–Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0) Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter Cutoff Current (VEB = 1.0 V, IC = 0) Collector Cutoff Current (VCB = 10 V, IE = 0) V(BR)CEO All V(BR)CBO All IEBO All ICBO All — — 0.1 µAdc — — 0.1 µAdc 20 23 — Vdc 10 12 — Vdc ON CHARACTERISTICS (3) DC Current Gain (VCE = 6.0 V, IC = 5.0 mA) (MMBR941LT1, MRF9411LT1) (MMBR941BLT1) DC Current Gain (VCE = 1.0 V, IC = 500 µA) DC Current Gain (VCE = 6.0 V, IC = 5.0 mA) MRF947T1, MRF947BT1 MRF947T1, T3 MRF947AT1 MRF947BT1 hFE 50 100 hFE1 hFE2 hFE3 hFE4 50 50 75 100 — — — — — — 200 200 — — 150 200 — — — DYNAMIC CHARACTERISTICS Collector–Base Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current Gain — Bandwidth Product (VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz) Ccb All fT All — 8.0 — GHz — 0.35 — pF NOTE: 1. To calculate the junction temperature use TJ = PD x RθJC + TCASE. Case temperature measured on collector lead immediately adjacent to body of package. 2. IC — Continuous (MTBF ≈ 10 years). 3. Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed. MMBR941 MRF947 MRF9411 SERIES 2–2 MOTOROLA RF DEVICE DATA PERFORMANCE CHARACTERISTICS Conditions Insertion Gain (VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz) (VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz) Maximum Unilateral Gain (1) (VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz) (V.


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