MMBR4957LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR4957LT1/D The RF Line PNP Silicon High-Frequency Transistor . . . designed for high–gain, low–noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin–film circuits using surface mount components. High Gain — Gpe = 17 dB Typ @ f = 450 MHz Low Noise — NF = 3.0 dB Typ @ f = 450 MHz Available in tape and reel packaging options by adding suffix: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C* Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value – 30 – 30 – 3.0 – 30 150 0.278 3.70 Unit Vdc Vdc Vdc mAdc °C W mW/°C IC = – 30 mA HIGH–FREQUENCY TRANSISTOR PNP SILICON MMBR4957LT1, T3 THERMAL CHARACTERISTICS Characteristic Storage Temperature Thermal Resistance Junction to Case* Symbol Tstg RθJC Max – 55 to +150 270 Unit °C °C/W CASE 318–07, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB) * Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. DEVICE MARKING MMBR4957LT1, T3 = 7F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10...