Document
www.DataSheet4U.com
MMBFJ309LT1, MMBFJ310LT1 JFET − VHF/UHF Amplifier Transistor
N−Channel
http://onsemi.com Features
2 SOURCE
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Drain−Source Voltage Gate−Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc 3 Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C Max Unit 1 2 3 GATE
1 DRAIN
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature
SOT−23 (TO−236) CASE 318 STYLE 10
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in.
6x M G G 1
= Device Code x = U for MMBFJ309LT1 x = T for MMBFJ310LT1 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
6x
ORDERING INFORMATION
Device MMBFJ309LT1 MMBFJ309LT1G MMBFJ310LT1 MMBFJ310LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number: MMBFJ309LT1/D
MMBFJ309LT1, MMBFJ310LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc) Gate Reverse Current (VGS = −15 Vdc, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL−SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = −10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Equivalent Short−Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) |Yfs| |yos| Ciss Crss en 8.0 − − − − − − − − 10 18 250 5.0 2.5 − mmhos mmhos pF pF nVń ǸHz MMBFJ309 MMBFJ310 IDSS VGS(f) 12 24 − − − − 30 60 1.0 mAdc Vdc MMBFJ309 MMBFJ310 V(BR)GSS IGSS VGS(off) −25 − − −1.0 −2.0 − − − − − − −1.0 −1.0 −4.0 −6.5 Vdc nAdc mAdc Vdc Symbol Min Typ Max Unit
http://onsemi.com
2
MMBFJ309LT1, MMBFJ310LT1
IDSS, SATURATION DRAIN CURRENT (mA) 70 60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30.