Document
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
J174 J175 J176 J177
MMBFJ175 MMBFJ176 MMBFJ177
G
D S G
TO-92
D
SOT-23
Mark: 6W / 6X / 6Y
S
P-Channel Switch
This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
- 30 30 50 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J174 - J177 350 2.8 125 357
Max
*MMBFJ175 225 1.8 556
Units
mW mW/°C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
J174-177, Rev. A
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
P-Channel Switch
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
B(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = 1.0 µ A, VDS = 0 VGS = 20 V, VDS = 0 VDS = - 15 V, ID = - 10 nA J174 J175 J176 J177 5.0 3.0 1.0 0.8 30 1.0 10 6.0 4.0 2.5 V nA V V V V
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current* VDS = - 15 V, IGS = 0 J174 J175 J176 J177 J174 J175 J176 J177 - 20 - 7.0 - 2.0 - 1.5 - 100 - 60 - 25 - 20 85 125 250 300 mA mA mA mA Ω Ω Ω Ω
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1 V, VGS = 0
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Common Drain-Source
-20 - DRAIN CURRENT (mA)
T A = 25°C TYP V GS(off) = 4.5 V
Parameter Interactions
- TRANSCONDUCTANCE (mmhos) 100 50
r DS I DSS g
fs
r
DS
1,000 500
- DRAIN "ON" RESISTANCE (Ω)
-16
V GS = 0 V
0.5 V
-12 -8
1.0 V 1.5 V 2.0 V
10 5
I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 µA
100 50
I
D
-4 0
2.5 V
3.0 V
3.5 V
fs
g
1
0
-1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V)
-5
1 V GS (OFF)
10 2 5 10 - GATE CUTOFF VOLTAGE (V)
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177
P-Channel Switch
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
-32 I D - DRAIN CURRENT (mA) - DRAIN CURRENT (mA)
V DS = - 15 V
V GS(off) = - 4.5 V
Transfer Characteristics
16
V DS = - 15 V
VGS(off) = - 4.5 V - 55°C 25°C 125°C VGS(off) = 2.5 V - 55°C 25°C 125°C
-24
- 55°C 25°C 125°C.
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