MMBD914LT1

www.DataSheet4U.com MMBD914LT1 Preferred Device High−Speed Switching Diode Features Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 3 Symbol PD Max 225 1.8 RqJA Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient RqJA Junction and Storage Temperature Range TJ, Tstg 417 −55 to +150 PD 556 300 2.4 Unit mW mW/°C °C/W mW 1 2 SOT−23 CASE 318 STYLE 8 3 CATHODE 1 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient MARKING DIAGRAM mW/°C °C/W °C 1 5D M G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) V(BR) IR − − CT VF trr − − − 25 5.0 4.0 1.0 4.0 nAdc mAdc pF Vd...