MMBD7000

MMBD7000 Discrete POWER & Signal Technologies MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 1 2 SOT-23 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25°C unless otherwise noted Parameter Value 70 200 600 700 1.0 2.0 -55 to +150 150 Units V mA mA mA A A °C °C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max MMBD7000* 350 2.8 357 Units mW mW/ °C °C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 ©1997 Fairchild Semiconductor Corporation MMBD7000 High Conductance Ultra Fast Diode (continued) Electrical Characteristics Symbol BV IR TA = 25°C unless otherwise noted Parameter Breakdown Voltage Reve...