Monolithic Dual Switching Diode
MCC
)HDWXUHV
• • •
omponents 21201 Itasca Street Chatsworth !"# $
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Description
MCC
)HDWXUHV
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
MMBD6100
Low Current Leakage SOT-23 Package For Surface Mount Application Capable of 225Watts of Power Dissipation
C
Monolithic Dual Switching Diode
5BM
A A
SOT-23
A D
0D[LPXP5DWLQJV
Operating Temperature: -55OC to +150OC Storage Temperature: -55OC to +150OC Maximum Thermal Resistance; 556OC/W Junction To Ambient
C
B
F
E
(OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH 6SHFLILHG
Reverse Voltage Minimum Reverse Breakdown Voltage Forward Current Power Dissipation FR-5 Board(1) Power Dissipation Alumina Substrate(2) Peak Forward Surge Current Junction Temperature Forward Voltage VR VBR IF PTOT 70V 70V 200mA 225mW 1.8mW/OC 300mW 2.4mW/OC 500mA 150OC 0.55~0.7V 0.85~1.1V IF=1.0mA IF=100mA VR=50V TA=25OC, Measured at VR=0V IF=IR=10mA IR (RCE)=1.0mA
.037 .950 .037 .950 .035 .900 .079 2.000 inches mm
IBR=100A TA=25 C Derate above 25OC TA=25OC Derate above 25OC 8.3ms, half sine
O
G
H
J
K DIMENSIONS INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37
PTOT IFSM TJ VF
DIM A B C D E F G H J K
MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020
MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51
NOTE
Suggested Solder Pad Layout
.031 .800
Maximum Reverse 0.1A Voltage Leakage IR Current Maximum Junction 2.5pF CJ Capacitance Maximum Reverse Trr 4.0nS Recovery ...
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