Dual Hot Carrier Mixer Diodes
LESHAN RADIO COMPANY, LTD.
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer application...
Description
LESHAN RADIO COMPANY, LTD.
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. Very Low Capacitance — Less Than 1.0 pF @ Zero Volts Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
3
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage THERMALCHARACTERISTICS
VR
7.0 V CC
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction to Ambient Total Device Dissipation
Alumina Substrate (2) T A = 25°C Derate above 25°C
RθJA PD
556 °C/W 300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING
RθJA T J ,T stg
417 –55 to +150
°C/W °C
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICA...
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