MMBD2837LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD2837LT1/D Monolithic Dual Switching Diodes ANODE 1 2 ANODE MMBD2837LT1 MMBD2838LT1 3 CATHODE 3 1 MAXIMUM RATINGS (EACH DIODE) Rating Peak Reverse Voltage D.C. Reverse Voltage Peak Forward Current Average Rectified Current MMBD2837LT1 MMBD2838LT1 Symbol VRM VR IFM IO Value 75 30 50 450 300 150 100 Unit Vdc Vdc mAdc mAdc 2 CASE 318 – 08, STYLE 9 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBD2837LT1 = A5; MMBD2838LT1 = MA6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBD2837LT1 MMBD2838LT1 MMBD2837LT1 MMBD2838LT1 CT VF V(BR) IR — — — — — — — 0.1 0.1 4.0 1.0 1.0 1.2 4.0 pF Vdc 35 ...