Monolithic Dual Switching Diodes
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MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes
Features
• Pb−Free Packages are Availabl...
Description
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MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes
Features
Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc mAdc
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ANODE 3
CATHODE 1 2 CATHODE
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD 225 mW
1 2 3
1.8 RqJA PD 556 300
mW/°C °C/W mW
SOT− 23 (TO −236AB) CASE 318 −08 STYLE 12
2.4 RqJA TJ, Tstg 417 −55 to +150
mW/°C °C/W °C
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
xxx M G G 1
xxx
= Specific Device Code A3X = MMBD2835LT1 A2X = MMBD2836LT1 M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device MMBD2835LT1 MMBD2835LT1G MMBD2836LT1 MMBD2836LT1G Package SOT−23 Shipping † 3000 / Tape & Reel
SOT−23 3000 / Tape & Reel (Pb−Free) SOT...
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